PaperMisfit dislocations and the morphology of gallium aluminum arsenide epitaxial layers grown on gallium arsenideH. Booyens, M.B. Small, et al.Journal of Applied Physics
PaperAlternative length scales for polycrystalline materials-I. Microstructure evolutionC.S. Nichols, R.F. Cook, et al.Acta Metallurgica Et Materialia
PaperReversal in the growth or dissolution of III-V heterostructures by liquid phase epitaxyM.B. Small, R. GhezJournal of Applied Physics
PaperA technique for comparing the bulk and surface structure of defects in thin films using the scanning transmission electron microscope.M.M.J. Treacy, W. Krakow, et al.Applied Physics Letters
