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113-GHz f T graded-base SiGe HBTs
E.F. Crabbé, B. Mcyerson, et al.
Device Research Conference 1993
Absolute rate constants have been determined for the reaction of SiH2 with the diatomics HCl, Cl2, NO and O2. Upper limits are reported for rate constants for the reaction of SiH2 with N2 and CO. Comparisons are made between the reactivity of silylene, singlet methylene and halogenated silylenes. © 1988.
E.F. Crabbé, B. Mcyerson, et al.
Device Research Conference 1993
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