Conference paper
Free standing silicon as a compliant substrate for SiGe
G.M. Cohen, P.M. Mooney, et al.
MRS Proceedings 2003
Absolute rate constants have been determined for the reaction of SiH2 with the diatomics HCl, Cl2, NO and O2. Upper limits are reported for rate constants for the reaction of SiH2 with N2 and CO. Comparisons are made between the reactivity of silylene, singlet methylene and halogenated silylenes. © 1988.
G.M. Cohen, P.M. Mooney, et al.
MRS Proceedings 2003
S.J. Koester, K. Ismail, et al.
Applied Physics Letters
P.M. Mooney, J.L. Jordan-Sweet, et al.
Applied Physics Letters
T.N. Jackson, S. Nelson, et al.
Device Research Conference 1993