A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
A ZnS ac thin film electroluminescence device can exhibit a brightness vs. voltage hysteresis loop or "memory effect". We show that this "memory effect" is associated with the filamentary nature of the dissipative current. The filaments show a bistability in their conductive state, i.e., the nature of the "ac negative resistance" involved is current controlled. Experimental results on single filament switching under voltage, pulse width and light address are presented. © 1979.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures