Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
Bisphenol‐A polysulfone, poly(oxy‐1,4‐phenylenesulfonyl‐1,4‐phenyleneoxy‐1, 4‐phenyleneisopropylidene‐1,4‐phenylene), PSF (I) showed greatly reduced resistance to electron beam irradiation when subjected simultaneously to an applied tensile stress. The creep rate increased, and the time (dose) to failure of the sample decreased with increasing stress. The failure strain was constant for different applied stresses. Air, oxygen, and moisture caused decreases in radiation resistance compared with a dry nitrogen atmosphere. Increasing the irradiation temperature from 0 to 90°C resulted in substantially decreased radiation resistance. Copyright © 1992 John Wiley & Sons, Inc.
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
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Active Matrix Liquid Crystal Displays Technology and Applications 1997
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Solid State Communications