Inherent stochasticity in phase-change memory devices
Manuel Le Gallo, Tomas Tuma, et al.
ESSDERC 2016
Phase-change materials and devices have received much attention as a potential route to the realization of various types of unconventional computing paradigms. In this letter, we present non-von Neumann arithmetic processing that exploits the accumulative property of phase-change memory (PCM) cells. Using PCM cells with integrated FET access devices, we perform a detailed study of accumulation-based computation. We also demonstrate efficient factorization using PCM cells, a technique that could pave the way for massively parallelized computations.
Manuel Le Gallo, Tomas Tuma, et al.
ESSDERC 2016
Andreea Anghel, Milos Stanisavljevic, et al.
Frontiers in Medicine
Manuel Le Gallo, Abu Sebastian, et al.
IEEE T-ED
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CF 2021