Accurate method of measuring specific contact resistivity of interface between silicide and silicon and its application

Reduction of specific contact resistivity is one of the key items for downscaling of device feature size. This paper discusses an accurate method of measuring specific contact resistivity by using our simple four-point probe test structure having a small area, the interface resistance of which is to be measured, fabricated on a substrate that has low sheet resistance. We also show its application for direct specific contact resistivity measurements of several systems that have dopant dependence, i.e., the NiPtSi/Si, NiPtSi/SiGe, and Pt silicide systems, as well as the metalmetal system between silicide and contact plug metal. © 2012 The Japan Society of Applied Physics.