Accurate method of measuring specific contact resistivity of interface between silicide and silicon and its application
- Kazuya Ohuchi
- Christian Lavoie
- et al.
- 2012
- Japanese Journal of Applied Physics
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18 results for Bin Yang
Leakage and contact resistance reduction by diffusion of dopants in NiPt suicide
- Ahmet Ozcan
- Ming Cai
- et al.
- 2011
- ADMETA 2011
Advanced strain engineering for state-of-the-art nanoscale CMOS technology
- Bin Yang
- Ming Cai
- 2011
- Science China Information Sciences
Exploitation of a self-limiting process for reproducible formation of ultrathin Ni1-x Ptx silicide films
- Zhen Zhang
- Bin Yang
- et al.
- 2010
- Applied Physics Letters
Effective schottky barrier lowering for contact resistivity reduction using silicides as diffusion sources
- Zhen Zhang
- F. Pagette
- et al.
- 2010
- VLSI-TSA 2010
Sharp reduction of contact resistivities by effective schottky barrier lowering with silicides as diffusion sources
- Zhen Zhang
- F. Pagette
- et al.
- 2010
- IEEE Electron Device Letters
High-κ/metal-gate fully depleted SOI CMOS with single-silicide schottky source/drain with sub-30-nm gate length
- Marwan H. Khater
- Zhen Zhang
- et al.
- 2010
- IEEE Electron Device Letters
Morphological stability and specific resistivity of sub-10 nm silicide films of Ni1-x Ptx on Si substrate
- Zhen Zhang
- Shi Li Zhang
- et al.
- 2010
- Applied Physics Letters
High performance 32nm SOI CMOS with high-k/metal gate and 0.149μm 2 SRAM and ultra low-k back end with eleven levels of copper
- B. Greene
- Q. Liang
- et al.
- 2009
- VLSI Technology 2009
High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor
- B. Yang
- R. Takalkar
- et al.
- 2008
- IEDM 2008