A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
With the technique of k-resolved inverse photoemission a pronounced dispersing surface state is observed for the Si(111)7×7 surface, 0.5 eV above the Fermi level. This state bears strong similarities with the empty adatom states observed on Si(111) ̂>3 × ̂>3 -Al, -Ga, and -In surfaces, and originates from the 12 adatoms in the 7×7 surface cell observed with scanning-tunneling microscopy. Reinterpretation of recent band-structure calculations identify the origin of all major surface states observed. © 1987 The American Physical Society.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Imran Nasim, Melanie Weber
SCML 2024
Frank Stem
C R C Critical Reviews in Solid State Sciences