High resolution 248 nm bilayer resist
Q. Lin, K.E. Petrillo, et al.
SPIE Advances in Resist Technology and Processing 1999
Nonvolatile resistive memory consisting of gold nanoparticles embedded in the conducting polymer poly(4-n-hexylphenyldiphenylamine) examined using admittance spectroscopy. The frequency dependence of the devices indicates space-charge-limited transport in the high-conductivity "on" state, as well as evidence for similar transport in the lower-conductivity "off" state. Furthermore, the larger dc capacitance of the on state indicates that a greater amount of filling of the midgap nanoparticle trap levels increases the overall device conductivity, leading to the memory effect. © 2006 American Institute of Physics.
Q. Lin, K.E. Petrillo, et al.
SPIE Advances in Resist Technology and Processing 1999
R.D. Allen, G.M. Wallraff, et al.
Microlithography 1995
R.J. Twieg, K. Betterton, et al.
Molecular Crystals and Liquid Crystals Science and Technology. Section A. Molecular Crystals and Liquid Crystals
G.M. Wallraff, T. Nguyen, et al.
CHEMTECH