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The paper reviews our recent progress and current challenges in implementing advanced gate stacks composed of high-κ dielectric materials and metal gates in mainstream Si CMOS technology. In particular, we address stacks of doped polySi gate electrodes on ultrathin layers of high-κ dielectrics, dual-workfunction metal-gate technology, and fully silicided gates. Materials and device characterization, processing, and integration issues are discussed. © Copyright 2006 by International Business Machines Corporation.
Hans Becker, Frank Schmidt, et al.
Photomask and Next-Generation Lithography Mask Technology 2004
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