B.H. Lee, A.C. Mocuta, et al.
IEDM 2002
Ambipolar electrical transport is reported in single-wall carbon nanotube (SWNT) field-effect transistors. In particular, the properties of SWNT junctions to TiC are discussed in detail. The carbide-nanotube junctions are abrupt and robust. In contrast to planar junctions, these contacts present low resistance for the injection of both p- and n-type carriers―the apparent barrier height of the junction is modified by the gate field. Thus SWNTs offer the novel possibility of ambipolar Ohmic contacts. © 2001 The American Physical Society.
B.H. Lee, A.C. Mocuta, et al.
IEDM 2002
C. Detavernier, A.S. Özcan, et al.
MRS Proceedings 2002
J. Appenzeller, R. Martel, et al.
DRC 2001
J. Appenzeller, R. Martel, et al.
Microelectronic Engineering