F.M. D'Heurle, C.S. Petersson, et al.
Journal of Applied Physics
A novel diffusion "marker" has been used in the backscattering study of the formation of Mo and W silicide films. Because of their closely similar crystallographic and chemical characteristics, Mo and W may be regarded as equivalent atoms in a diffusion process. Hence, in the formation of WSi 2 and MoSi2 by interaction of a bilayer film of W+Mo with substrate Si, the interface between the W and Mo (observable by backscattering) becomes a "marker" to permit identification of the moving species (Si at T<1000°C).
F.M. D'Heurle, C.S. Petersson, et al.
Journal of Applied Physics
B.D. Terris, D. Weller, et al.
Journal of Applied Physics
D. Mangelinck, P.-E. Hellberg, et al.
JES
C. Lavoie, C. Cabral Jr., et al.
Journal of Electronic Materials