F.M. D'Heurle, J. Tersoff, et al.
Journal of Applied Physics
A novel diffusion "marker" has been used in the backscattering study of the formation of Mo and W silicide films. Because of their closely similar crystallographic and chemical characteristics, Mo and W may be regarded as equivalent atoms in a diffusion process. Hence, in the formation of WSi 2 and MoSi2 by interaction of a bilayer film of W+Mo with substrate Si, the interface between the W and Mo (observable by backscattering) becomes a "marker" to permit identification of the moving species (Si at T<1000°C).
F.M. D'Heurle, J. Tersoff, et al.
Journal of Applied Physics
J.E.E. Baglin, F.M. D'Heurle, et al.
Journal of Applied Physics
J.E.E. Baglin
Nuclear Inst. and Methods in Physics Research, B
J.E.E. Baglin, F.M. D'Heurle, et al.
Journal of Applied Physics