Emmanuel F. Crabbé, James H. Comfort, et al.
IEEE Electron Device Letters
We have presented a SiGc-basc bipolar technology which has faster circuit speed at liquid nitrogen temperature than at room temperature. Transistors were fabricated using a reduced-temperature process employing a novel in-situ doped polysilicon emitter contact, a lightly doped epitaxial emitter cap layer, and a graded SiGe base. Transistors have a current gain as high as 500 with a cutoff frequency (fT) of 61 GHz, up from 43 GHz at 300 K. ECL circuits switch at a record 21.9 ps at 84 K at Jcs=1.0 mA/μm2 (25.4 ps at 310 K). For completeness the low-temperature properties of this technology are compared with more conventional ipi and pi SiGe-base designs.
Emmanuel F. Crabbé, James H. Comfort, et al.
IEEE Electron Device Letters
Pong-Fei Lu, James H. Comfort, et al.
IEEE Electron Device Letters
John D. Cressler, Emmanuel F. Crabbé, et al.
IEEE Electron Device Letters
G. Shahidi, J. Warnock, et al.
VLSI Technology 1992