Functional high-speed characterization and modeling of a six-layer copper wiring structure and performance comparison with aluminum on-chip interconnections
- A. Deutsch
- H. Harrer
- et al.
- 1998
- IEDM 1998
Publications
Date
Featured collections
Popular topics
58 results for E.F. Crabbé
High-performance sub-0.08 μm CMOS with dual gate oxide and 9.7 ps inverter delay
- M. Hargrove
- S.W. Crowder
- et al.
- 1998
- IEDM 1998
Electrical characteristics and reliability of sub-3 nm gate oxides grown on nitrogen implanted silicon substrates
- L.K. Han
- S.W. Crowder
- et al.
- 1997
- IEDM 1997
Optimization of SiGe HBT Technology for High Speed Analog and Mixed-Signal Applications
- D.L. Harame
- J.M.C. Stork
- et al.
- 1993
- IEDM 1993
Vertical Profile Optimization of Very High Frequency Epitaxial Si- and SiGe-Base Bipolar Transistors
- E.F. Crabbé
- B.S. Meyerson
- et al.
- 1993
- IEDM 1993
A high performance epitaxial SiGe-base ECL BiCMOS technology
- D.L. Harame
- E.F. Crabbe
- et al.
- 1992
- IEDM 1992
Measurements and simulation of avalanche breakdown in advanced Si bipolar transistors
- E. Zanoni
- E.F. Crabbe
- et al.
- 1992
- IEDM 1992
Single crystal emitter gap for epitaxial Si- and SiGe-base transistors
- J.H. Comfort
- E.F. Crabbe
- et al.
- 1991
- IEDM 1991
SiGe-base heterojunction bipolar transistors: Physics and design issues
- G.L. Patton
- J.M.C. Stork
- et al.
- 1990
- IEDM 1990
Profile leverage in self-aligned epitaxial Si or SiGe base bipolar technology
- J.H. Comfort
- G.L. Patton
- et al.
- 1990
- IEDM 1990