Bc Kwon, Natasha Mulligan, et al.
ISMB 2025
An interface-marker technique has been used to investigate the relative rates of diffusion of Si and of metal atoms during the growth of metal silicide films. The technique enables recognition of a reference plane in thin film diffusion using Rutherford backscattering, while minimizing any perturbation of the diffusion process. Examples are drawn from studies of the growth of silicides of W, Mo, Ta, Nb, V, Pd and Pt. © 1980.
Bc Kwon, Natasha Mulligan, et al.
ISMB 2025
John K. Kastner, Chandler R. Dawson, et al.
Journal of Medical Systems
Joshua Hui, Sarah Knoop, et al.
IHI 2012
M.H. Tabacniks, A.J. Kellock, et al.
MRS Spring Meeting 1995