Q.Z. Hong, K. Barmak, et al.
Journal of Applied Physics
Annealing behavior of Cu and dilute Cu-alloy films was analyzed. Annealing at 400 °C for 5 h or 650 or 950 °C for 0 h led to a reduction in resistivity as a result of grain growth and alloy decomposition by precipitation and/or surface segregation. The higher the annealing temperature, the lower the resistivity.
Q.Z. Hong, K. Barmak, et al.
Journal of Applied Physics
Y.-H. Kim, C. Cabral Jr., et al.
IEDM 2005
C. Cabral Jr., C. Lavoie, et al.
Thin Solid Films
K. Barmak, A. Gungor, et al.
MRS Proceedings 2002