D.A. Smith, K. Barmak, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Annealing behavior of Cu and dilute Cu-alloy films was analyzed. Annealing at 400 °C for 5 h or 650 or 950 °C for 0 h led to a reduction in resistivity as a result of grain growth and alloy decomposition by precipitation and/or surface segregation. The higher the annealing temperature, the lower the resistivity.
D.A. Smith, K. Barmak, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
K. Barmak, A. Gungor, et al.
Materials Science in Semiconductor Processing
D. Edelstein, C. Uzoh, et al.
ADMETA 2001
P. Solomon, K.W. Guarini, et al.
IEEE Circuits and Devices Magazine