J.C. Tsang, Ph. Avouris, et al.
Journal of Electron Spectroscopy and Related Phenomena
We use scanning tunneling microscopy to investigate the reactivity of the dangling-bond states of Si(111)-(7×7). The reaction with NH3 is used as a prototype. We find that Si rest atoms are more reactive than Si adatoms and that center adatoms are more reactive than corner adatoms. Using atom-resolved electronic spectra, we probe the dangling-bond states on both clean and NH3-exposed surfaces. We find significant interactions and charge transfer between sites which strongly influence surface reactivity. © 1988 The American Physical Society.
J.C. Tsang, Ph. Avouris, et al.
Journal of Electron Spectroscopy and Related Phenomena
Ph. Avouris, I.-W. Lyo, et al.
Chemical Physics Letters
R.J. Hamers, Ph. Avouris, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Ph. Avouris, N.J. Dinardo, et al.
The Journal of Chemical Physics