Ellen J. Yoffa, David Adler
Physical Review B
Bias-dependent scanning tunneling microscopy (STM), used in conjunction with atomic-charge superposition calculations, is shown to provide information on both atomic and electronic surface structure. Si(111)-(7×7) STM images measured with different bias voltages are compared with a number of recent structural models. Striking agreement is found with the stacking-fault-adatom model of Takayanagi. The unit-cell asymmetry found at negative sample bias is attributed to a stacking fault in one half of the unit cell, locally modifying the surface electronic structure. © 1986 The American Physical Society.
Ellen J. Yoffa, David Adler
Physical Review B
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering