Peter J. Price
Surface Science
Lateral trench photodetectors (LTD) on silicon-on-insulator (SOI) have been fabricated using a fully CMOS compatible process. High speed (2.0 GHz), high quantum efficiency (51%), and excellent frequency response characteristics have been achieved at 851 nm with a supply voltage of only 3.3 V.
Peter J. Price
Surface Science
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997