Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS
Lateral trench photodetectors (LTD) on silicon-on-insulator (SOI) have been fabricated using a fully CMOS compatible process. High speed (2.0 GHz), high quantum efficiency (51%), and excellent frequency response characteristics have been achieved at 851 nm with a supply voltage of only 3.3 V.
Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry
E. Burstein
Ferroelectrics