J.H. Stathis, R. Bolam, et al.
INFOS 2005
Paper
High speed silicon lateral trench detector on SOI substrate
Abstract
Lateral trench photodetectors (LTD) on silicon-on-insulator (SOI) have been fabricated using a fully CMOS compatible process. High speed (2.0 GHz), high quantum efficiency (51%), and excellent frequency response characteristics have been achieved at 851 nm with a supply voltage of only 3.3 V.
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