PBTI under dynamic stress: From a single defect point of view
K. Zhao, J.H. Stathis, et al.
IRPS 2011
Remote hydrogen plasma exposure is used to study the transport of atomic hydrogen, H0, through reoxidized-nitrided oxides and SiO2 and to quantify H0-induced degradation of their interfaces with silicon. It is directly demonstrated that (1) H0 is extremely reactive and produces large numbers of interface states; (2) the transport of H0 to the silicon/oxide interface is strongly suppressed in reoxidized-nitrided oxides; and (3) this suppression of the H0 transport is mainly responsible for the much slower interface degradation of reoxidized-nitrided oxides during high-field, hot-electron stress as compared to thermal oxide.
K. Zhao, J.H. Stathis, et al.
IRPS 2011
M.J. Uren, V. Nayar, et al.
JES
K. Henson, H. Bu, et al.
IEDM 2008
J. Westlinder, T. Schram, et al.
IEEE Electron Device Letters