Filamentary Statistical Evolution from Nano-Conducting Path to Switching-Filament for Oxide-RRAM in Memory Applications
- Ernest Wu
- Takashi Ando
- et al.
- 2019
- IEDM 2019
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182 results for Eduard Cartier
Ultra-scaled Conformal Scavenging Electrode with Superior Tunability for Short-channel RMG FinFET Workfunction and all-ALD 3D-compatible ReRAM
- John Rozen
- K. Suu
- et al.
- 2019
- IEDM 2019
CMOS compatible MIM decoupling capacitor with reliable sub-nm EOT high-k stacks for the 7 nm node and beyond
- Takashi Ando
- Eduard Cartier
- et al.
- 2016
- IEDM 2016
Fundamental aspects of HfO 2-based high-k metal gate stack reliability and implications on t inv-scaling
- E. Cartier
- Andreas Kerber
- et al.
- 2011
- IEDM 2011
Impact of TDDB in MG/HK devices on circuit functionality in advanced CMOS technologies
- Andreas Kerber
- D. Lipp
- et al.
- 2011
- IEDM 2011
A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications
- S. Krishnan
- U. Kwon
- et al.
- 2011
- IEDM 2011
Electrical characterization of 3D Through-Silicon-Vias
- Fei Liu
- Xiaoxiong Gu
- et al.
- 2010
- ECTC 2010
Understanding mobility mechanisms in extremely scaled HfO2 (EOT 0.42 nm) using remote interfacial layer scavenging technique and V t-tuning dipoles with gate-first process
- T. Ando
- M.M. Frank
- et al.
- 2009
- IEDM 2009
Gate length scaling and high drive currents enabled for high performance SOI technology using high-κ/metal gate
- K. Henson
- H. Bu
- et al.
- 2008
- IEDM 2008
Fundamental understanding and optimization of PBTI in nFETs with SiO 2/HfO2 gate stack
- E. Cartier
- B.P. Linder
- et al.
- 2006
- IEDM 2006