J.R. Heath, S. Gates, et al.
Applied Physics Letters
Two Si atomic layer epitaxy schemes based on Cl/H exchange chemistry are compared by deposition of Si on Ge(100). Time-of-flight direct recoiling and reflection high-energy electron diffraction are used to characterize the very thin Si layers. It is shown that alternating exposure to SiCl2H 2 and atomic hydrogen deposits Si in a process that is self-limiting. Growth of Si by this method results in either alloy formation or Si island growth as low as 465°C on Ge(100), which prohibits a simple measurement of Si thickness/cycle. In contrast, alternating exposure to Si2Cl 6 and Si2H6 below 500°C results in Si deposition with uniform thickness. Plots of direct recoil intensity versus incident angle (with respect to the surface plane) are a sensitive probe of the thin layer morphology.
J.R. Heath, S. Gates, et al.
Applied Physics Letters
D.D. Koleske, S. Gates
Applied Surface Science
R. Imbihl, J.E. Demuth, et al.
Physical Review B
S. Gates
MRS Spring Meeting 1997