Optimizing ULK film properties to enable BEOL integration with TDDB reliability
- E. T. Ryan
- Deepika Priyadarshini
- et al.
- 2015
- IITC/MAM 2015
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72 results for Stephen M. Gates
Sequential Lateral Solidification of Silicon Thin Films on Cu BEOL-Integrated Wafers for Monolithic 3-D Integration
- Fabio Carta
- Stephen M. Gates
- et al.
- 2015
- IEEE T-ED
Sequential lateral solidification of silicon thin films on low-k dielectrics for low temperature integration
- Fabio Carta
- Stephen M. Gates
- et al.
- 2014
- Applied Physics Letters
Corrosion in low dielectric constant Si-O based thin films: Buffer concentration effects
- F.W. Zeng
- Stephen M. Gates
- et al.
- 2014
- AIP Advances
Effect of low-frequency radio frequency on plasma-enhanced chemical vapor deposited ultra low-κ dielectric films for very large-scale integrated interconnects
- E. T. Todd Ryan
- Stephen M. Gates
- et al.
- 2014
- Journal of Applied Physics
Progress in the development and understanding of advanced low k and ultralow k dielectrics for very large-scale integrated interconnects - State of the art
- Alfred Grill
- Stephen M. Gates
- et al.
- 2014
- Applied Physics Reviews
UV cure impact on robust low-k with sub-nm pores and high carbon content for high performance Cu/low-k BEOL modules
- N. Inoue
- F. Ito
- et al.
- 2013
- IITC 2013
Corrosion of Si-O based porous low-k dielectrics
- A.B. Hall
- G.J. Irvine
- et al.
- 2012
- Applied Physics Letters
Tailoring dielectric materials for robust BEOL reliability
- G. Bonilla
- T.M. Shaw
- et al.
- 2012
- IRPS 2012
Effects of chemical mechanical polishing on a porous SiCOH dielectric
- S. Gates
- S. Papa Rao
- et al.
- 2012
- Microelectronic Engineering