Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
A dissociated 60° misfit dislocation at the substrate interface of a Si/GexSi(1-x) heterojunction has been examined using EELS and ADF imaging. New spectra are obtained at the intrinsic stacking fault, at the dislocation cores and in the strained regions on either side of the stacking fault. A splitting of the L1 conduction band due to symmetry breaking at the stacking fault is observed. Near edge conduction band states are verified at the partial dislocation cores, but not at the stacking fault.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
John G. Long, Peter C. Searson, et al.
JES