The DX centre
T.N. Morgan
Semiconductor Science and Technology
The surface morphology of epitaxial (001) Si1-x Gex films, subject to biaxial strain, is studied by atomic force microscopy (AFM). Distinct facets are observed, oriented on {105}, {311}, and {518} crystal faces. The tiled arrangement of facets resembles a mosaic. We find that the growth sequence begins with the shallow {105} facets, followed by the appearance of steeper facets. After strain relaxation, the morphology coarsens and facets become less distinct. The existence of discrete facets produces a kinetic barrier to strain-induced roughening; and we show that increasing this barrier (by growing at reduced strain or reduced temperature) leads to a flatter surface morphology. © 1994.
T.N. Morgan
Semiconductor Science and Technology
R. Ghez, J.S. Lew
Journal of Crystal Growth
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting