Oliver D. Patterson, Xing J. Zhou, et al.
ASMC 2010
Defect inspection plays a large role in the development and manufacture of semiconductor technologies. Defects detected in today's inspections tools are generally a fraction of a micron and require SEM review to analyze and justify corrective measures. It is very important that the review SEM drives to the exact location of the defects as a FoV (Field of View) of 2μm is necessary to provide the resolution needed for defect redetection without the inefficiencies associated with repeated zooming of the image. A methodology which allows quick and accurate alignment of the review SEM to the defects in the results file is presented. This methodology uses a special structure containing programmed defects. The methodology is illustrated using the challenging example of PWQ wafers. © 2011 IEEE.
Oliver D. Patterson, Xing J. Zhou, et al.
ASMC 2010
Oliver D. Patterson, Deborah A. Ryan, et al.
ASMC 2013
Brian Donovan, Oliver D. Patterson, et al.
ASMC 2013
Oliver D. Patterson, Roland Hahn, et al.
ASMC 2010