S. Sidler, Irem Boybat, et al.
ESSDERC 2016
Electrical transport and thermoelectric properties of thin indium arsenide nanowires have been investigated in the temperature range between 100 K and 365 K. Charge carrier concentration was varied by a back-gate electrode. In nanowires with a diameter of 20 nm, discrete conductance plateaus are observed at low temperature indicating one-dimensional quantization of the density of states. A mean free path of 135 nm is extracted. At room temperature, the one-dimensional nature leads to drastically enhanced thermoelectric properties. A 100 % increase of the thermoelectric power factor σS2 (calculated from the electrical conductivity σ and the Seebeck coefficient S) is obtained in the nanowires compared to bulk InAs bulk material.
S. Sidler, Irem Boybat, et al.
ESSDERC 2016
Philipp Mensch, Siegfried Karg, et al.
Applied Physics Letters
F. Menges, Fabian Motzfeld, et al.
IEDM 2016
D. Cutaia, Kirsten E. Moselund, et al.
EUROSOI-ULIS 2015