III-V semiconductor nanowires for future devices
Heinz Schmid, Mattias Borg, et al.
DATE 2014
Electrical conductivity and Seebeck coefficient of quasi-one-dimensional indium arsenide (InAs) nanowires with 20 nm diameter are investigated. The carrier concentration of the passivated nanowires was modulated by a gate electrode. A thermoelectric power factor of 1.7 × 10-3 W/m K2 was measured at room temperature. This value is at least as high as in bulk-InAs and exceeds by far typical values of thicker InAs nanowires with three-dimensional properties. The interpretation of the experimental results in terms of power-factor enhancement by one-dimensionality is supported by model calculations using the Boltzmann transport formalism.
Heinz Schmid, Mattias Borg, et al.
DATE 2014
Johannes Gooth, Vanessa Schaller, et al.
Applied Physics Letters
F. Menges, Fabian Motzfeld, et al.
IEDM 2016
Carlos Navarro, Santiago Navarro, et al.
IEEE J-EDS