P.C. Pattnaik, D.M. Newns
Physical Review B
Deposited Ni, Pd, and Pt films on n-type Si have been annealed up to 700°C. Silicide formation was monitored by MeV He4 Rutherford backscattering and glancing-angle x-ray diffraction. Barrier-height measurements were performed mainly using forward I-V characteristics. The values of the barrier heights are 0.66 eV for Ni2Si and NiSi, 0.75 eV for Pd2Si; 0.85 eV for Pt2Si, and 0.87 to 0.88 eV for PtSi. The barrier heights depend primarily on the metal deposited and not on the particular silicide phase. © 1981 The American Physical Society.
P.C. Pattnaik, D.M. Newns
Physical Review B
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Ming L. Yu
Physical Review B