Dario Narducci, C. Richard Guarnieri, et al.
JES
Boron diffusivity in single-crystal diamond has been investigated. To this aim, a novel method using impedance spectroscopy for the study of the atomic diffusivity in wide-gap semiconductor has been developed, along with a model for the analysis of the dielectric response function. The advantages of this procedure are discussed. Boron diffusivity in diamond has been determined to be 6.9×10-20 cm2 s-1 at 800°C. A discussion of the results and a comparison with previous estimates are presented.
Dario Narducci, C. Richard Guarnieri, et al.
JES
Richard Lossy, David L. Pappas, et al.
Applied Physics Letters
James M.E. Harper, Jerome J. Cuomo, et al.
Nuclear Inst. and Methods in Physics Research, B
Jerome J. Cuomo, David L. Pappas, et al.
Journal of Applied Physics