Conference paper
PBTI under dynamic stress: From a single defect point of view
K. Zhao, J.H. Stathis, et al.
IRPS 2011
Soft-x-ray photoemission measurements of the bulk Si 2p core level in Si/SiO2 overlayer structures show that hot-electron transport in SiO2 is essentially independent of temperature between 300 and 980 K. These results reveal a basic failure of the semiclassical Monte Carlo formalism to correctly model the strong electron-phonon interaction in SiO2 at electron energies >6 eV. The experimental data are shown to be consistent with the trends seen in quantum Monte Carlo transport calculations. © 1992 The American Physical Society.
K. Zhao, J.H. Stathis, et al.
IRPS 2011
E. Gusev, M. Copel, et al.
Applied Physics Letters
F.J. Himpsel, F.R. McFeely, et al.
Physical Review B
S. Krishnan, U. Kwon, et al.
IEDM 2011