R. Pagano, S. Lombardo, et al.
Microelectronics Reliability
We report a sharp threshold at 4 V in the growth rate of breakdown spots in thin films of [Formula presented] on silicon. This provides some of the first information concerning the electronic structure of the breakdown spot. © 2003 The American Physical Society.
R. Pagano, S. Lombardo, et al.
Microelectronics Reliability
J.C. Tsang, B.P. Linder
Applied Physics Letters
J.H. Stathis
Microelectronic Engineering
F. Palumbo, S. Lombardo, et al.
IRPS 2004