P. Srinivasan, B.P. Linder, et al.
Microelectronic Engineering
Paper
Breakdown Transients in Ultrathin Gate Oxides: Transition in the Degradation Rate
Abstract
We report a sharp threshold at 4 V in the growth rate of breakdown spots in thin films of [Formula presented] on silicon. This provides some of the first information concerning the electronic structure of the breakdown spot. © 2003 The American Physical Society.
Related
M. Chudzik, B. Doris, et al.
VLSI Technology 2007
R. Rodríguez, J.H. Stathis, et al.
IEEE Electron Device Letters
B.P. Linder, V.K. Paruchuri, et al.
ECS Meeting 2007