G.V. Gadiyak, J.H. Stathis
Semiconductors
We report a sharp threshold at 4 V in the growth rate of breakdown spots in thin films of [Formula presented] on silicon. This provides some of the first information concerning the electronic structure of the breakdown spot. © 2003 The American Physical Society.
G.V. Gadiyak, J.H. Stathis
Semiconductors
Soon-Cheon Seo, L.F. Edge, et al.
VLSI Technology 2011
F. Palumbo, S. Lombardo, et al.
IRPS 2004
R. Rodríguez, J.H. Stathis, et al.
Microelectronics Reliability