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AMC 2005
We report a sharp threshold at 4 V in the growth rate of breakdown spots in thin films of [Formula presented] on silicon. This provides some of the first information concerning the electronic structure of the breakdown spot. © 2003 The American Physical Society.
S. Mehta, C. Dimitrakopoulos, et al.
AMC 2005
R. Rodríguez, J.H. Stathis, et al.
Microelectronics Reliability
V. Narayanan, V.K. Paruchuri, et al.
VLSI Technology 2006
J.H. Stathis, B.P. Linder, et al.
Microelectronics Reliability