John G. Long, Peter C. Searson, et al.
JES
The effects of channel length scaling on carbon nanotube field-effect transistor (CNTFET) performance was investigated by varying device lengths on the same nanotube. Results show that scaling improves performance with substantial increases in on-current, resistances closer to the quantum limit than have ever been reported, and the shortest (∼30 nm) well-behaving CNTFETs to date. © 2009 IEEE.
John G. Long, Peter C. Searson, et al.
JES
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
E. Burstein
Ferroelectrics
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics