Understanding mobility mechanisms in extremely scaled HfO2 (EOT 0.42 nm) using remote interfacial layer scavenging technique and V t-tuning dipoles with gate-first process
- T. Ando
- M.M. Frank
- et al.
- 2009
- IEDM 2009
Publications
16 results at IEDM 2009
A non-iterative compact model for carbon nanotube FETs incorporating source exhaustion effects
- Lan Wei
- David J. Frank
- et al.
- 2009
- IEDM 2009
Fermi level depinning at metal-organic semiconductor interface for low-resistance ohmic contacts
- Zihong Liu
- Masaharu Kobayashi
- et al.
- 2009
- IEDM 2009
Trigate 6T SRAM scaling to 0.06 μm2
- M. Guillorn
- J. Chang
- et al.
- 2009
- IEDM 2009
Understanding amorphous states of phase-change memory using frenkel-poole model
- Y.H. Shih
- M.H. Lee
- et al.
- 2009
- IEDM 2009
Reduction of random telegraph noise in high-κ / metal-gate stacks for 22 nm generation FETs
- N. Tega
- H. Miki
- et al.
- 2009
- IEDM 2009
Technologies to further reduce soft error susceptibility in SOI
- P. Oldiges
- R.H. Dennard
- et al.
- 2009
- IEDM 2009
Challenges and solutions of FinFET integration in an SRAM cell and a logic circuit for 22 nm node and beyond
- H. Kawasaki
- V.S. Basker
- et al.
- 2009
- IEDM 2009
Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications
- K. Cheng
- A. Khakifirooz
- et al.
- 2009
- IEDM 2009
Can carbon nanotube transistors be scaled without performance degradation?
- Aaron D. Franklin
- George Tulevski
- et al.
- 2009
- IEDM 2009