Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Interfaces have a strong effect on the energy levels and transport properties of carriers in inversion and accumulation layers, in quantum wells and superlattices, and at heterojunctions. The effects on energy levels are discussed briefly and the scattering effects are discussed in more detail, including the consequences of a change in effective mass across a heterojunction interface. Edge scattering in narrow inversion layer channels is considered briefly. © 1983.
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
E. Burstein
Ferroelectrics
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering