Carrier leakage in 1.3 μm SCH quantum well lasers

S. Hausser; C. Harder; H.P. Meier

doi:10.1109/ISLC.1992.763649

ISLC 1992

Conference paper

21 Sep 1992

Carrier leakage in 1.3 μm SCH quantum well lasers

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Abstract

We demonstrate 1300 nm SCH quantum well lasers grown by CBE with low threshold and high efficiency. Spontaneous emission measurements of these lasers indicate strong carrier leakage. This reduces T0 to values around 55 K.

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