U. Dürig, J.K. Gimzewski, et al.
Physical Review Letters
The potential distribution across the cleaved end face of a forward-biased GaAs double heterojunction laser diode was mapped using scanning tunneling potentiometry. Space-charge regions next to the heterojunction interface as well as the electron-hole recombination region within the active layer are outlined with nanometer resolution. The carrier injection zone in the active layer is observed as a function of junction voltage.
U. Dürig, J.K. Gimzewski, et al.
Physical Review Letters
D. Pohl, W.I. Goldburg
Physical Review Letters
D. Pohl, R. Möller
Review of Scientific Instruments
S. Nilsson, E. Van Gieson, et al.
Applied Physics Letters