W.J. Gallagher, C.C. Chi, et al.
Applied Physics Letters
We have measured the dependence of the free-carrier lifetime on O + ion-implantation dose in silicon-on-sapphire. At low implant doses, the carrier trapping rate increased linearly with the trap density introduced by ion implantation. At doses above 3×1014 cm -2 the measured carrier lifetime reached a limit of 600 fs.
W.J. Gallagher, C.C. Chi, et al.
Applied Physics Letters
D. Grischkowsky
Applied Physics Letters
P. Santhanam, C.C. Chi, et al.
Physical Review Letters
H. Harde, D. Grischkowsky
Ultrafast Processes in Spectroscopy 1991