Channeling of ions near the silicon 〈001〉 axis

J.F. Ziegler; R.F. Lever

doi:10.1063/1.95630

Applied Physics Letters

Paper

01 Jan 1985

Channeling of ions near the silicon 〈001〉 axis

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Abstract

The first experimental mapping of ion beam channels near the Si 〈001〉 axis is reported. All features are identified by theoretical plots of silicon planar channels and axial channels.

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Formation of vanadium silicides by the interactions of v with bare and oxidized Si wafers

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Abstract

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