C.-C. Yang, P. Flaitz, et al.
IEEE Electron Device Letters
Paper
Characterization of copper electromigration dependence on selective chemical vapor deposited cobalt capping layer thickness
Abstract
Co films with various thicknesses were selectively deposited as Cu capping layers by chemical-vapor-deposition technique. Selectivity of the Co deposition between Cu and dielectric surfaces was improved by raising the deposition pressure. Degree of electromigration (EM) resistance enhancement was observed to be dependent on the deposited Co thickness. Compared to the no-Co control, significant EM lifetime enhancement was observed when the Co cap is thicker than 6 nm. © 2011 IEEE.
Related
A. Topol, C. Sheraw, et al.
VLSI Technology 2006
P.M. Mooney, J.L. Jordan-Sweet, et al.
Applied Physics Letters
Conference paper
Endurance improvement of Ge2Sb2Te5-based phase change memory
Chieh-Fang Chen, A.G. Schrott, et al.
IMW 2009