Characterization of epitaxial (Ca,Ba)F2 films on Si(111) substrates

M. Wittmer; D.A. Smith; Armin Segmüller; H. Zogg; H. Melchior

doi:10.1063/1.97529

Applied Physics Letters

Paper

01 Dec 1986

Characterization of epitaxial (Ca,Ba)F₂ films on Si(111) substrates

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Abstract

We have investigated epitaxial BaF2/CaF2 bilayers on Si(111) with ion channeling, grazing-incidence x-ray diffraction, and transmission electron microscopy. The BaF2 layer, which was grown on a thin intermediate CaF2 layer, showed a channeling minimum yield of 8% and a residual strain of 0.2%. Regions of BaF2 with a mosaic spread in orientation were observed but otherwise the epitaxial quality of the fluoride bilayer was found to be very good.

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