C.-Y. Ting, M. Wittmer, et al.
JES
We have investigated epitaxial BaF2/CaF2 bilayers on Si(111) with ion channeling, grazing-incidence x-ray diffraction, and transmission electron microscopy. The BaF2 layer, which was grown on a thin intermediate CaF2 layer, showed a channeling minimum yield of 8% and a residual strain of 0.2%. Regions of BaF2 with a mosaic spread in orientation were observed but otherwise the epitaxial quality of the fluoride bilayer was found to be very good.
C.-Y. Ting, M. Wittmer, et al.
JES
D. Ugolini, J. Eitle, et al.
Applied Physics A Solids and Surfaces
G.M.W. Kroesen, G.S. Oehrlein, et al.
JES
M.F.C. Hisholm, D.A. Smith
Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties