Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
By using a field-effect transistor configuration, we have demonstrated that it is possible to dope electrons or holes into an initially underdoped YBa2Cu3O7-x film at room temperature. The results of systematic measurements of the dual-type transconductance indicate comparable field-effect mobilities for electrons and holes. We propose a model based on band bending and localized electronic states within the band gap of the Mort insulator to explain the dual-type charge transport.
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Ming L. Yu
Physical Review B
Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids