O.F. Schirmer, K.W. Blazey, et al.
Physical Review B
By using a field-effect transistor configuration, we have demonstrated that it is possible to dope electrons or holes into an initially underdoped YBa2Cu3O7-x film at room temperature. The results of systematic measurements of the dual-type transconductance indicate comparable field-effect mobilities for electrons and holes. We propose a model based on band bending and localized electronic states within the band gap of the Mort insulator to explain the dual-type charge transport.
O.F. Schirmer, K.W. Blazey, et al.
Physical Review B
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films