CMOS mixed-signal circuit process variation sensitivity characterization for yield improvement

Abstract

A mixed-signal circuit's performance and yield dependency on process variation are investigated with numerical circuit solution, statistical simulation, and implemented circuit measurement in 65nm partially-depleted silicon-on-insulator CMOS process. Increased relative variation in 65nm process is examined with site-to-site and wafer-to-wafer process variations. A current-controlled oscillator's performance and device threshold voltages are cross-correlated using simulation and RF measurement. Up to 93.9% cross-correlation between oscillation frequency and device threshold voltage is obtained, and strong model-to-hardware correlation is observed through statistical analysis of simulation result and circuit measurement. The yield learning process of design, simulation, measurement, and statistical analysis is proposed. © 2006 IEEE.