Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
To extend previous work in the frequency domain, as a function of temperature, the forms of anelastic or dielectric loss peaks are computed directly involving a Gaussian distribution of activation energies. The calculations provide the height, width, asymmetry, and frequency‐shift behavior of the loss peak as a function of a dimensionless parameter defining the width of the distribution. The calculations are used to determine how well the input distribution can be recovered or deconvoluted from a set of peaks, obtained for several different frequencies, by a simple empirical procedure termed a cross‐cut analysis. The procedure is found to work well for peaks whose width is more than twice the Debye width. Copyright © 1987 WILEY‐VCH Verlag GmbH & Co. KGaA
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Daniel J. Coady, Amanda C. Engler, et al.
ACS Macro Letters
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials