Fei Liu, Benjamin Fletcher, et al.
IITC 2013
We have examined Cu 2ZnSnSe 4 (CZTSe) solar cells prepared by thermal co-evaporation on Mo-coated glass substrates followed by post-deposition annealing under Se ambient. We show that the control of an interfacial MoSe 2 layer thickness and the introduction of an adequate Se partial pressure (P Se) during annealing are essential to achieve high efficiency CZTSe solar cells-a reverse correlation between device performance and MoSe 2 thickness is observed, and insufficient P Se leads to the formation of defects within the bandgap as revealed by photoluminescence measurements. Using a TiN diffusion barrier, we demonstrate 8.9 efficiency CZTSe devices with a long lifetime of photo-generated carriers. © 2012 American Institute of Physics.
Fei Liu, Benjamin Fletcher, et al.
IITC 2013
Christos Dimitrakopoulos, Yu-Ming Lin, et al.
Journal of Vacuum Science and Technology B
M. H. Lee, R. Cheek, et al.
IEDM 2010
Shay Reboh, Chen Zhang, et al.
VLSI Technology and Circuits 2025