Advanced gate stacks with fully silicided (FUSI) gates and high-κ dielectrics: Enhanced performance at reduced gate leakage
- E. Gusev
- C. Cabral Jr.
- et al.
- 2004
- IEDM 2004
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76 results for Nestor Bojarczuk
Charge trapping in aggressively scaled metal gate/high-κ stacks
- E. Gusev
- V. Narayanan
- et al.
- 2004
- IEDM 2004
80 nm poly-silicon gated n-FETs with ultra-thin Al2O3 gate dielectric for ULSI applications
- D.A. Buchanan
- E. Gusev
- et al.
- 2000
- IEDM 2000
Hall Mobility in Hafnium Oxide Based MOSFETs: Charge Effects
- L.Å. Ragnarsson
- N.A. Bojarczuk
- et al.
- 2003
- IEEE Electron Device Letters
Electrical characterization of Al2O3 n-channel MOSFETs with aluminum gates
- L.Å. Ragnarsson
- S. Guha
- et al.
- 2001
- IEEE Electron Device Letters
High efficiency Cu2ZnSnSe4 solar cells with a TiN diffusion barrier on the molybdenum bottom contact
- Byungha Shin
- Yu Zhu
- et al.
- 2012
- PVSC 2012
High efficiency Cu 2ZnSn(S xSe 1-x) 4 thin film solar cells by thermal co-evaporation
- Byungha Shin
- Kejia Wang
- et al.
- 2011
- PVSC 2011
Investigation of band gap, band alignment and bonding states of the (TbxSc1-x)2O3/ Si system
- I. Geppert
- M. Eizenberg
- et al.
- 2010
- ECS Transactions
Recent advances in search for suitable high-k/metal gate solutions to replace SiON/Poly-silicon gate stacks in CMOS devices for 45nm and beyond technologies
- B.P. Linder
- V.K. Paruchuri
- et al.
- 2007
- ECS Meeting 2007
Band-edge high-performance high-κ /metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyond
- V. Narayanan
- V.K. Paruchuri
- et al.
- 2006
- VLSI Technology 2006