Ernest Y. Wu, James H. Stathis, et al.
Semiconductor Science and Technology
In spite of 50 years of history, there is still no consensus on the basic physics of Negative Bias Temperature Instability. Two competing models, Reaction-Diffusion and Defect-Centric, currently vie for dominance. The differences appear fundamental: one model holds that NBTI is a diffusion-limited process and the other holds that it is reaction-limited. Basic issues of disagreement are summarized and the main controversial aspects of each model are reviewed and contrasted.
Ernest Y. Wu, James H. Stathis, et al.
Semiconductor Science and Technology
James H. Stathis
IBM J. Res. Dev
Miaomiao Wang, Zuoguang Liu, et al.
IRPS 2015
James H. Stathis
IPFA 2005