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Correlated DLTS and EPR measurements of defects in As-grown and electron irradiated p-type GaP
Abstract
DLTS and EPR measurements were done on the same samples of Zn-doped GaP, both as grown and irradiated with 2 MeV electrons. An irradiation induced trap measured by DLTS with thermal activation energy of 0.64 eV for the emission of a hole to the valence band was found to have the same introduction rate and annealing temperature as the EPR signal NRL1, attributed to VGa. © 1983.
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