Erich P. Stuntebeck, John S. Davis II, et al.
HotMobile 2008
Conference paper
Critical analysis of 14nm device options
Abstract
Modeling challenges and solutions for silicon based high performance device options at the 14nm node are presented. A variety of devices are being considered, using a variety of methods to analyze the devices objectively. Partially depleted silicon on insulator (PDSOI) devices are compared against extremely thin (ETSOI) and FinFET devices. © 2011 IEEE.
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