A. Levy, M.J. Lercel, et al.
Journal of Applied Physics
We describe current-voltage measurements on superconducting Nb/InGaAs junction field-effect transistors which reveal a crossover from tunneling-dominated to Andreev scattering-dominated transport at the superconductor-semiconductor contacts as Schottky barrier thickness decreases with increasing interfacial dopant concentration. These measurements are the first demonstration of such a crossover in a thin-film structure, and are of interest for investigations of hybrid superconductor-semiconductor devices, proximity effect boundary conditions, and transport in ohmic contacts to semiconductors.
A. Levy, M.J. Lercel, et al.
Journal of Applied Physics
H.S.J. Van Der Zant, R.A.M. Receveur, et al.
Applied Physics Letters
A.W. Kleinsasser, T.N. Jackson
IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits 1989
A.W. Kleinsasser, T.N. Jackson, et al.
IEEE T-ED